Reduced oxides having large thermoelectric zt values

ABSTRACT

Doped and partially-reduced oxide (e.g., SrTiO 3 -based) thermoelectric materials. The thermoelectric materials can be single-doped or multi-doped (e.g., co-doped) and display a thermoelectric figure of merit (ZT) of 0.2 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting suitable raw materials and heating them in a graphite environment to at least partially reduce the resulting oxide. Optionally, a reducing agent such as titanium carbide, titanium nitride, or titanium boride can be incorporated into the starting materials prior to the reducing step in graphite. The reaction product can be sintered to form a dense thermoelectric material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No. 13/192,842, filed Jul. 28, 2011, the contents of which is relied upon and incorporated herein by reference in its entirety, and the benefit of priority under 35 U.S.C. §120 is hereby claimed.

BACKGROUND

The present disclosure relates to thermoelectric materials that can be used in thermoelectric devices for electric power generation, and more particularly to partially-reduced, doped oxides that have a high thermoelectric figure of merit.

Thermoelectric materials can be used to generate electricity when exposed to a temperature gradient according to the thermoelectric effect. Notably, a thermoelectric device such as a thermoelectric power generator can be used to produce electrical energy, and advantageously can operate using waste heat such as industrial waste heat generated in chemical reactors, incineration plants, iron and steel melting furnaces, and in automotive exhaust. Efficient thermoelectric devices can recover about 5% or more of the heat energy released by such industrial systems, though due to the “green nature” of the energy, lower efficiencies are also of interest. Compared to other power generators, thermoelectric power generators operate without toxic gas emission, and with longer lifetimes and lower operating and maintenance costs.

The conversion of thermal energy into electrical energy is based on the Seebeck effect, a phenomenon that describes the formation of an electrical potential in a material that is exposed to a thermal gradient. The Seebeck voltage, ΔU, also referred to as the thermopower or thermoelectric power of a material, is the induced thermoelectric voltage in response to a temperature difference across that material. The Seebeck coefficient S is defined as the limit of that thermoelectric voltage when the temperature gradient goes to zero, S=limΔU/∇T and has units of VK⁻¹ though typical values are in the range of microvolts per Kelvin.

A thermoelectric device typically includes two types of semiconducting material (e.g., n-type and p-type) though thermoelectric devices comprising a single thermoelectric material (either n-type or p-type) are also known. Conventionally, both n-type and p-type conductors are used to form n-type and p-type elements within a device. In a typical device, alternating n-type and p-type elements are electrically connected in series and thermally connected in parallel between electrically insulating but thermally conducting plates. Because the equilibrium concentration of carriers in a semiconductor is a function of temperature, a temperature gradient in the material causes carrier migration. The motion of charge carriers in a device comprising n-type and p-type elements will create an electric current.

For purely p-type materials that have only positive mobile charge carriers (holes), S>0. For purely n-type materials that have only negative mobile charge carriers (electrons), S<0. In practice, materials often have both positive and negative charge carriers, and the sign of S usually depends on which carrier type predominates.

The maximum efficiency of a thermoelectric material depends on the amount of heat energy provided and on materials properties such as the Seebeck coefficient, electrical conductivity and thermal conductivity. A figure of merit, ZT, can be used to evaluate the quality of thermoelectric materials. ZT is a dimensionless quantity that for small temperature differences is defined by ZT=σS²T/κ, where σ is the electric conductivity, S is the Seebeck coefficient, T is temperature, and κ is the thermal conductivity of the material. Another indicator of thermoelectric material quality is the power factor, PF=σS².

A material with a large figure of merit will usually have a large Seebeck coefficient (found in low carrier concentration semiconductors or insulators) and a large electrical conductivity (found in high carrier concentration metals).

Good thermoelectric materials are typically heavily-doped semiconductors or semimetals with a carrier concentration of 10¹⁹ to 10²¹ carriers/cm³. Moreover, to ensure that the net Seebeck effect is large, there should only be a single type of carrier. Mixed n-type and p-type conduction will lead to opposing Seebeck effects and lower thermoelectric efficiency. In materials having a sufficiently large band gap, n-type and p-type carriers can be separated, and doping can be used to produce a dominant carrier type. Thus, good thermoelectric materials typically have band gaps large enough to have a large Seebeck coefficient, but small enough to have a sufficiently high electrical conductivity. The Seebeck coefficient and the electrical conductivity are inversely related parameters, however, where the electrical conductivity is proportional to the carrier density (n) while the Seebeck coefficient scales with 3n^(−2/3).

Further, a good thermoelectric material advantageously has a low thermal conductivity. Thermal conductivity in such materials comes from two sources. Phonons traveling through the crystal lattice transport heat and contribute to lattice thermal conductivity, and electrons (or holes) transport heat and contribute to electronic thermal conductivity.

One approach to enhancing ZT is to minimize the lattice thermal conductivity. This can be done by increasing phonon scattering, for example, by introducing heavy atoms, disorder, large unit cells, clusters, rattling atoms, grain boundaries and interfaces.

Previously-commercialized thermoelectric materials include bismuth telluride- and (Si, Ge)-based materials. The family of (Bi,Pb)₂(Te,Se,S)₃ materials, for example, has a figure of merit in the range of 1.0-1.2. Slightly higher values can be achieved by selective doping, and still higher values can be reached for quantum-confined structures. However, due to their lack of chemical stability and low melting point, the application of these materials is limited to relatively low temperatures (<450° C.), and even at such relatively low temperatures, they require protective surface coatings. Other known classes of thermoelectric materials such as clathrates, skutterudites and silicides also have limited applicability to elevated temperature operation.

In view of the foregoing, it would be advantageous to develop thermoelectric materials (e.g., n-type and/or p-type) capable of efficient operation at elevated temperatures. More specifically, it would be advantageous to develop environmentally-friendly, high-temperature thermoelectric materials having a high figure of merit in the medium-to-high temperature range, e.g., above 450° C.

SUMMARY

These and other aspects and advantages can be achieved by a family of doped oxide materials that are at least partially reduced during their synthesis. The classes of oxides can include SrTiO₃-based materials, including bulk, polycrystalline materials having the general formula (Sr_(1-x)D1_(x))_(1-z)(Ti_(1-y)D2_(y))Ti_(z)O_(3-m), where D1 and D2 each represent one or more dopant atoms (e.g., Ce, Nb, Ta, La, Y and other rare earth elements).

Reduction can be accomplished by heating and reacting suitable raw materials in a reducing environment (e.g., graphite environment). A complimentary reduction approach involves incorporating into the raw materials a reducing agent such as titanium carbide, titanium nitride, or titanium boride, e.g., in the form of particles. The mixture is then heated and reacted to produce a partially-reduced oxide thermoelectric material. The resulting material can be sintered into dense elements using, for example, spark plasma sintering. Using such an approach, the fraction of thermal conductivity due to the lattice component can be reduced from over 97 percent to less than 75 percent, and the thermoelectric material can exhibit ZT values of about 0.2 or higher (e.g., about 0.33) at 1050K. Example dopants can be incorporated separately or in combination. Thus, embodiments include co-doped SrTiO₃ materials.

The disclosed SrTiO₃-based materials can be incorporated into a thermoelectric device. An exemplary method for forming such materials includes combining raw materials to form a mixture, surrounding the mixture with graphite, and heating the mixture to form a partially-reduced thermoelectric oxide material.

Additional features and advantages will be set forth in the detailed description which follows, and in part will be readily apparent to those skilled in the art from that description, including the detailed description which follows, the claims, as well as the appended drawings.

It is to be understood that both the foregoing general description and the following detailed description present embodiments, and are intended to provide an overview or framework for understanding the nature and character of the disclosure as it is claimed. The accompanying drawings are included to provide a further understanding, and are incorporated into and constitute a part of this specification. The drawings illustrate various embodiments and together with the description serve to explain the principles and operations of the various embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows thermoelectric figure of merit values as a function of Y- and/or La-doping in comparative, unreduced SrTiO₃-based materials;

FIG. 2 shows plots of thermoelectric for comparative and example SrTiO₃-based thermoelectric materials;

FIG. 3 is a plot of the fraction of the lattice component of the thermal conductivity to the total thermal conductivity for comparative and example SrTiO₃-based thermoelectric materials;

FIG. 4 is a plot of ZT versus temperature for further comparative and example SrTiO₃-based thermoelectric materials;

FIG. 5 is a plot of the electronic and lattice contributions to the thermal conductivity as a function of temperature for an example SrTiO₃-based thermoelectric material;

FIG. 6 is a plot of ZT versus temperature for still further comparative and example SrTiO₃-based thermoelectric materials;

FIG. 7 is a plot of temperature and piston travel as a function of time according to an example densification method for forming thermoelectric materials according to various embodiments;

FIG. 8 is a plot of force and piston travel as a function of time for the data illustrated in FIG. 7;

FIG. 9 is a plot of additional thermoelectric data versus temperature for Composition F (TiC addition);

FIG. 10 is a plot of thermoelectric data versus temperature for Composition F (TiB₂ addition);

FIG. 11 is a plot of thermoelectric data versus temperature for Composition F (TiN addition);

FIG. 12 is a plot of additional thermoelectric data versus temperature for Compositions F, and H-L; and

FIG. 13 shows SEM and EDX data for several example thermoelectric materials.

DETAILED DESCRIPTION

The disclosure relates generally to high temperature thermoelectric materials and methods of making such materials. The inventive materials are doped and partially-reduced oxides optionally comprising a second phase. According to embodiments, nanoscale titanium carbide (TiC), titanium nitride (TiN), titanium oxide (TiO_(x)≦2) or titanium boride (TiB₂) can be combined with strontium titanate (SrTiO₃) raw materials, and the mixture can be heated and reacted under reducing conditions to form the thermoelectric materials. Reduction of the powders prior to sintering increases the power factor (σS²) and ZT with respect to the unreduced material. The addition of a reducing agent (TiC, TiN, TiB₂) further increases the power factor while suppressing expected increases in thermal conductivity.

Advantageously, the strontium titanate is at least partially reduced either by reaction with a reducing second phase that is incorporated into precursor materials used to form the strontium titanate, by exposure to reducing conditions during heating or densification, or a combination of both. In embodiments, the inventive thermoelectric material is a composite comprising strontium titanate and/or its sub-stoichiometric phases and at least one second phase. Unless otherwise defined, strontium titanium oxide (SrTiO₃) and its various sub-stoichiometric forms are referred to herein collectively as strontium titanate.

In addition to strontium and titanium, additional elements may be incorporated into the disclosed thermoelectric materials and the resulting composition may include, for example, dopants include Ce, Nb, Ta, La, Y and other rare earth elements. Such dopant elements, if included, can substitute for Sr and/or Ti on respective cationic lattice sites and/or be incorporated on interstitial sites. Niobium-doping, for example, can create a high concentration of n-type carriers and increases the electronic conductivity by several orders of magnitude. Further, by doping with niobium, metallic-like conduction can be obtained at low oxygen activity while semiconductor behavior prevails at high oxygen activity. In embodiments, the disclosed thermoelectric materials can be co-doped, where two or more dopants are incorporated into the material (e.g., on equivalent or different lattice sites).

In embodiments, the effects of La and Y co-doping and reduction on the high temperature thermoelectric properties of strontium titanate materials were investigated. Bulk, polycrystalline materials having the composition (Sr_(1-x)D1_(x))_(1-z)(Ti_(1-y)D2_(y))Ti_(z)O_(3-m), where D1 is La and Y, D2 is Nb, 0≦x≦0.4, 0≦y≦0.4, 0.025≦(x+y)≦0.4, 0≦z≦0.15, and 0≦m≦0.1 were prepared by powder processing and spark plasma sintering. Reduction of the powders was achieved by two methods: (1) heat treatment of the powders in a graphite bed prior to sintering, or (2) addition of TiC, TiN, or TiB₂ and heat treatment of the powders in a graphite bed prior to sintering. The use of additives was found to be effective at improving the high temperature ZT by increasing the electrical conductivity without causing large increases in thermal conductivity.

The effect of one or more dopants on the thermoelectric figure of merit is illustrated in FIG. 1, which is a plot of ZT values as a function of La and/or Y doping in unreduced (comparative) SrTiO₃ materials at 660K and 1050K. The measured ZT values are represented as circles for different La (x-axis) and Y (y-axis) concentrations. The size of the circles represents the value of ZT for each composition. The 660K data is represented by dashed circles, while the 1050K data is represented by solid circles. Referring to FIG. 1, the largest ZT value is 0.07 at 1050K for La_(0.15)Y_(0.05)Sr_(0.8)TiO₃.

Incorporating a single dopant yields the lowest ZT values. On the other hand, the effect of co-doping can be accretive as illustrated by comparing the increase in the ZT values for La_(x)Y_(y)Sr_(0.9)TiO₃ where x=0.05; y=0.05 relative to the singly doped compositions D_(0.1)Sr_(0.9)TiO₃ (D=dopant=La or Y).

Further, co-doping can be optimized. Two trends are apparent with La and Y. First, for a 1:1 ratio of La:Y, ZT is larger nearer the origin, indicating that a lower total concentration of dopants may be preferred. However, ZT can be increased further when the dopants are included in non-equal amounts. Illustrative of this is the trend at constant Y=0.05 with increasing La, where the highest ZT is achieved with La=0.15.

In view of the foregoing observed trends between doping composition(s) and the figure of merit, doped materials were reduced via (a) a heat treatment using a graphite environment, or (b) mixing the precursor materials first with 5 wt. % nano-scale titanium carbide (or other reducing agent) followed by a heat treatment using a graphite environment.

The graphite heat treatment can be carried out at any suitable temperature for any effective time. The data in FIG. 2 represent samples reduced using heat treatments at 1400° C. for 6 hours, though the heat treatment can be performed at 1200, 1250, 1300, 1350, 1400, 1450, 1500, 1550, 1600, 1650, 1700, 1750 or 1800° C. for a period of time ranging from 0.5 to 12 hours. In the graphite reduction, samples of the thermoelectric material to be reduced are buried within a bed of graphite powder within a suitable furnace. In an embodiment, the precursor materials can be sintered at elevated temperature (e.g., at least 900° C., 1200° C. or 1400° C.) in air or in a high oxygen partial pressure environment prior to the reducing treatment in order to form the SrTiO₃ phase. In addition to the SrTiO₃ phase formation, such a pre-treatment at elevated temperature in air or a high oxygen partial pressure environment can preferentially form a high concentration of point defects (e.g., oxygen vacancies and cationic carriers of niobium or titanium), which can be retained in the solid state upon cooling and ultimately benefit the thermoelectric properties of the resulting thermoelectric material.

In a complimentary approach, the thermoelectric material to be reduced can be mixed with a reducing agent such as titanium carbide. Titanium carbide is an example of a half-metal conducting phase that crystallizes in the rock salt structure and exhibits a wide range of stoichiometry. The composition of titanium carbide, for example, can vary as expressed by the chemical formula, TiC_(x) (0.6<x<1). According to embodiments, the TiC (or TiN, or TiB₂) powder can have a crystallite size and/or particle size of around 200 nm (e.g., from 1 to 500 nm).

Although titanium carbide is a relatively poor thermoelectric material, it has a high electrical conductivity and can contribute to the electrical conductivity when incorporated into a composite thermoelectric material. The thermal conductivity of titanium carbide at room temperature is on the order of about 20 W/mK. In embodiments, a reducing step was performed by first mixing the precursor materials with 5 wt. % nano-scale titanium carbide and then heat treating the composite material using a graphite environment. Although experiments were performed using 5 wt. % TiC, the amount of TiC incorporated into the precursor materials can range from about 0.25 to 10 wt. %. In further embodiments, a reducing step was performed by first heat treating the precursor materials using a graphite environment and then incorporating into the thermoelectric material a material such as titanium carbide. Subsequent heat treating accomplished during sintering can affect a mild reduction.

In the disclosed strontium titanate-titanium carbide composites, the intrinsic oxygen activity is low due to the co-existence of the oxide with the carbide. As a result, the electrical conductivity of the composite material is higher than the electrical conductivity of the oxide without any second (TiC) phase. In embodiments, the overall electrical conductivity of the composite is high due to contributions from both phases. In further embodiments, incorporation into the precursor materials of TiC can decrease the lattice thermal conductivity of the resulting thermoelectric composite relative to a single phase system.

Thus, embodiments of the disclosure relate to a reduced (e.g., partially-reduced), doped material. The reduction can be accomplished with or without the use of a reducing agent. A reducing agent, such as TiC, if used, has been demonstrated to yield a higher overall ZT value than that obtained following reduction without such a reducing agent.

The effect of the reducing treatments on the electrical conductivity, Seebeck coefficient, power factor, thermal conductivity, and ZT for an example La_(0.15)Y_(0.05)Sr_(0.8)TiO₃ alloy is illustrated in FIG. 2. Throughout FIG. 2, the filled circles represent calcined but unreduced (i.e., comparative) samples, the squares represent samples reduced using a heat treatment at 1400° C. for 6 hours in graphite, and the triangles represent samples reduced by first incorporating 5 wt. % nano-scale titanium carbide into the thermoelectric material composition and then heat treating at 1400° C. for 6 hours in graphite.

The sample exhibiting the highest power factor was made by incorporating 5 wt. % nano-TiC into the alloy and then heat treating at 1400° C. for 6 hours in graphite. Its low temperature thermal conductivity is only slightly higher than the ‘reduced only’ sample while at higher (closer to use) temperatures its thermal conductivity is comparable.

The nano TiC+heat treated sample has a ZT value of about 0.3 at 1050K. The large increase in electrical conductivity for the nano TiC-containing sample, relative to the heat-treated only sample is unique in that the magnitude of its Seebeck coefficient is not significantly decreased nor is its thermal conductivity significantly increased.

The thermal conductivity data can be examined using the Wiedemann-Franz law that states that the ratio of a metal's electronic component of thermal conductivity to its total electrical conductivity is proportional to temperature according to κ_(elec)/σ=LT, where L is the Lorenz Number for free electrons. For free electrons, L has a value of 2.44×10⁻⁸ W/SK². Using the Wiedemann-Franz law and the assumptions inherent in it, the electron contribution of κ can be calculated from measured properties. Since the thermal conductivity is the sum of electron and lattice components, the value of the lattice thermal conductivity can determined from the difference. For thermoelectric applications, it is generally advantageous to decrease the lattice component of the thermal conductivity, as most of the heat is carried by this mechanism. Furthermore, decreasing the lattice component of an electrically conducting material effectively breaks the connection between electrical conductivity and (total) thermal conductivity and allows for independent tailoring of the components to maximize ZT.

Also shown in FIG. 2 are the electronic and lattice components to the thermal conductivity for the three samples. It is noteworthy that the lattice thermal conductivity for the reduced samples (graphite heat-treated and, in particular, nano TiC-containing with graphite heat treatment) is comparable to the lattice thermal conductivity of the calcined-only sample, suggesting that reduction and reduction in the presence of nano-TiC can be useful in decreasing the lattice component, perhaps by increasing the number of defects in the material.

This point is further illustrated with reference to FIG. 3, which is a plot of the fraction of lattice component of the thermal conductivity to the total thermal conductivity for the three samples of FIG. 2. The plot shows that for the calcined-only material (squares), over 97% of its thermal conductivity is due to the lattice component. For the graphite-reduced (diamonds) and the TiC-containing and then graphite-reduced samples (triangles), this fraction is about 90% and about 70%, respectively, depending on the measurement temperature.

Throughout FIGS. 3-6, the filled squares represent calcined but unreduced (i.e., comparative) samples, the diamonds represent samples reduced using a heat treatment at 1400° C. for 6 hours in graphite, and the triangles represent samples reduced by first incorporating 5 wt. % nano-scale titanium carbide

In addition to the foregoing data for the co-doped example La_(0.15)Y_(0.05)Sr_(0.8)TiO₃ alloy, the thermoelectric properties for La_(0.05)Y_(0.05)Sr_(0.9)TiO₃ were also evaluated. An analogous set of experiments were conducted resulting in densified, as-made (oxidized) material, material that was heat treated at 1400° C. for 6 hours in graphite, and material that was mixed with 5 wt. % nano-TiC and then heat treated at 1400° C. for 6 hours in graphite.

The same general trends are observed where electrical conductivity is significantly enhanced while thermal conductivity is decreased as a function of reduction. The thermoelectric figure of merit data are summarized in FIG. 4, which show that the material containing 5 wt. % TiC that was heat treated at 1400° C. exhibits a ZT value of about 0.23 at 1060K.

The effect of TiC addition on the thermal conductivity of the La_(0.05)Y_(0.05)Sr_(0.9)TiO₃ samples is seen in FIG. 5, where the electronic and lattice components of the total thermal conductivity are plotted. The lowest lattice thermal conductivity is exhibited by the TiC-containing material following the heat treatment at 1400° C. for 6 hours in graphite.

In addition to the La, Y co-doped compositions, Nb-doped SrTiO₃ compositions were prepared and found to exhibit similar property enhancements when processed with TiC and a reducing heat-treatment. In various examples, the niobium is incorporated into the material on titanium lattice sites. FIG. 6 shows the ZT values as a function of temperature for a set of Nb_(0.2)Ti_(0.8)SrO₃ materials. The highest ZT is achieved by incorporating 5 wt. % TiC into the composition followed by a reducing heat treatment at 1400° C. for 6 hours in graphite. The electrical conductivity was increased relative to the as-made and reduced material while the thermal conductivity was decreased.

Due in part to their high figure of merit, high thermal shock resistance, thermal and chemical stability and relatively low cost, the disclosed thermoelectric materials can be used effectively and efficiently in a variety of applications, including automotive exhaust heat recovery. Though heat recovery in automotive applications involves temperatures in the range of about 400-750° C., the thermoelectric materials can withstand chemical decomposition in non-oxidizing environments or, with a protective coating, in oxidizing environments up to temperatures of 1000° C. or higher.

As disclosed herein, a method of making a thermoelectric material comprises mixing suitable starting materials, optionally heat treating or processing the starting materials at high temperature (greater than 900° C.) in air, and then heat treating the mixture in a reducing environment. In embodiments, doped SrTiO₃ starting materials (optionally including a reducing agent such as TiC) are prepared by turbula mixing of the appropriate oxides (and/or carbonates and/or individual elements), pressing the mixed materials into a die, and heating in air. For example, the pressing can be done in a 1.25 inch diameter die at about 4000 psi, following by heating in air at 1200° C. for 8 hours.

The resulting pellets can then be combined, rehomogenized by grinding, and pressed again into pellets, which can be heated (e.g., in air at 1200° C.). The resulting doped SrTiO₃ material can be reground and then reduced. As disclosed earlier, the act of reducing the thermoelectric material can comprise a heating step in graphite or, alternatively, incorporation of a reducing agent into the material followed by a heating step in graphite.

In one embodiment, pellets are cold-pressed and then buried in a bed of graphite. The assembly is placed into a furnace and heated, for example, at 1400° C. for 6 hours. After reduction, the material can be milled and sieved prior to densification. An example sieve size is 45 microns (or about 325 mesh).

In a further embodiment, nano-TiC or another nanoscale reducing agent can be mixed (e.g., turbula mixed) with the doped SrTiO₃ material prior to heating in the bed of graphite.

The prepared powders can be densified using spark plasma sintering (SPS). In an example method, a powder mixture can be placed into a graphite die, which is loaded into a Spark Plasma Sintering (SPS) apparatus where the powder mixture is heated and densified under vacuum and under applied pressure using a rapid heating cycle. Spark Plasma Sintering is also referred to as Field Assisted Sintering Technique (FAST) or Pulsed Electric Current Sintering (PECS). Other types of sintering can be used, such as HP or natural sintering in a reducing environment. Of course, other types of apparatus can be used to mix and compact the powder mixture. For example, powders can be mixed using ball milling or spray drying. Compaction of the mixture may be accomplished using a uniaxial or isostatic press.

Run data from a representative SPS sintering run are shown in FIGS. 7 and 8. In an example method, approximately 5 grams of material are densified using a 20 mm graphite die and piston assembly in the SPS apparatus. The compressed ceramics were found to be >98% dense.

Although FIG. 7 discloses a particular heating cycle, and FIG. 8 discloses a corresponding force profile, heating cycles with hold (maximum) temperatures of from about 900-1500° C. can be used in conjunction with heating rates from about 450° C. to the hold temperature of greater than 100° C./min (e.g., between about 100 and 400° C./minute), and hold times of from about 30 seconds to 10 minutes. A pressure of between about 3 to 60 MPa can be applied to the powder mixture to affect densification.

The electrical conductivity and Seebeck coefficient can show inverse responses to parameter changes. For example, an increase in the maximum SPS heating temperature increases the electrical conductivity but decreases the magnitude of the Seebeck coefficient. Faster heating rates and shorter dwell times also promote an increase in the magnitude of the Seebeck coefficient at lower electrical conductivity.

Thermoelectric properties were obtained from samples that were cut into coupons measuring 2-3 mm×2-3 mm×12-14 mm. Both the Seebeck coefficient and the electrical conductivity were measured simultaneously using a ULVAC-ZEM3 device from room temperature up to 800° C. The thermal conductivity was obtained at various temperatures from the product of the heat capacity and the thermal diffusivity, which were determined using a thermal property analyzer (Anter Corp., Pittsburg, Pa.) and the bulk density of the material.

Table 1 lists several exemplary doped and co-doped SrTiO₃-based thermoelectric compositions that were reduced and evaluated according to the processing methods disclosed herein. Omitted from the compositional data listed in Table 1 is presence in some samples of titanium carbide or other reducing agent, which may be added to the composition before or after a thermal reduction step in graphite.

TABLE 1 Example doped and co-doped thermoelectric oxide compositions ZT at 1050K (LaxYySr1 − x − y)1 − zTi1 + zO3 As 5 wt % TiC + No. (x + y) x y z Made Reduced 5 Reduced A 0.05 0.025 0.025 0 0.06 0.14 0.17 B 0.10 0.100 0.000 0 0.01 0.16 0.19 C 0.10 0.000 0.100 0 0.14 0.20 D 0.10 0.050 0.050 0 0.03 0.11 0.28 E 0.20 0.100 0.100 0 0.02 0.10 0.30 F 0.20 0.150 0.050 0 0.07 0.15 0.30 G 0.25 0.150 0.100 0 0.24 0.24 H 0.20 0.150 0.050 0.040 0.01 I 0.20 0.150 0.050 0.055 0.05 J 0.20 0.150 0.050 0.078 0.21 K 0.20 0.150 0.050 0.090 0.25 L 0.20 0.150 0.050 0.110 0.18 *the as-made samples are un-reduced and comparative.

The highest ZT at 1050K of 0.30 was obtained with Composition E, La_(0.1)Y_(0.1)Sr_(0.8)TiO_(3-δ)+5 wt. % TiC, and Composition F, La_(0.15)Y_(0.05)Sr_(0.8)TiO_(3-δ)+5 wt. % TiC. Compositions H-L are based on Composition F with excess titanium oxide batched before the calcination process step (z>0). The maximum ZT at 1050K=0.25 was obtained at z=0.09, Composition K.

In embodiments, the disclosed thermoelectric materials have an electrical conductivity greater than 10³ S/m, a Seebeck coefficient (absolute value) greater than 100 μV/K, and a thermal conductivity K over a temperature range of 400-1200K of less than 6 W/mK. By way of example, the electrical conductivity can be greater than 10³, 2×10³, 3×10³, 4×10³, 5×10³, 6×10³, 7×10³, 8×10³, 9×10³, 10⁴, 2×10⁴, 3×10⁴, 4×10⁴, 5×10⁴, 6×10⁴, 7×10⁴, 8×10⁴, 9×10⁴ or 10⁵ S/m, the absolute value of the Seebeck coefficient can be greater than 100, 150, 200, 250, 300 or 350 μV/K, and the thermal conductivity over the range of 400-1200K can be less than 6, 5.5, 5, 4.5, 4, 3.5, 3, 2.5, 2 or 1.5 W/mK. Further, the electrical conductivity, Seebeck coefficient and thermal conductivity may have values that extend over a range where the minimum and maximum values of the range are given by the values above. For example, a thermoelectric material that has an electrical conductivity greater than 10³ S/m can also be defined as having an electrical conductivity between 2×10⁴ and 10⁵ S/m.

Recalling that the power factor is defined as PF=σS², and the figure of merit is defined as ZT=σS²T/κ, according to embodiments the disclosed thermoelectric material has a power factor times temperature at 1000 K greater than about 0.1 W/mK (e.g., greater than 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2 or 1.3 W/mK) and a figure of merit at 1000K greater than about 0.2 (e.g., greater than 0.2, 0.25, 0.3 or 0.35). Further, values of power factor times temperature and figure of merit may extend over a range where the minimum and maximum values of the range are given by the values above.

The thermoelectric figure of merit for the doped, partially-reduced thermoelectric oxide materials disclosed herein is at least 0.01 at 1050K (e.g., at least 0.01, 0.05, 0.1, 0.15, 0.2, 0.25 or 0.3 at 1050K).

In further examples, dense, polycrystalline ceramics were prepared from mixtures of dry SrCO₃, La₂O₃, Y₂O₃, TiO₂ and Ti₂O₃ powders. The powders were turbula-mixed and cold-pressed into pellets which were calcined at 1200° C. for 12 hours in air, milled, then re-calcined under the same conditions and re-milled. In some cases, an additive such as TiC (Sigma Aldrich, <200 nm), TiN (Sigma Aldrich, <3 microns) or TiB₂ (NaBond, ˜60 nm) was mixed into the calcined powder.

Cold-pressed pellets were buried in a graphite bed formed from a silica crucible filled with graphite powder. The assembly was heated to 1400° C. in an air atmosphere and held for 6 hours. The reduced materials were milled and sieved to about 325 mesh. Powders were sintered in a 20 mm-diameter graphite die using spark plasma sintering. The maximum temperature and hold time were 1500° C. for 15 sec with an applied force of 11 kN.

Polished samples for analysis were prepared from the sintered parts. Electrical conductivity and Seebeck coefficients were measured from room temperature to 800° C. in a helium atmosphere using an ULVAC-ZEM3 instrument. Thermal diffusivity (D) and heat capacity (C_(P)) were measured at various temperatures over the same temperature range using the laser flash method. Thermal conductivity was calculated from the product of these measurements and density (p) using the relationship K(T)=D(T)C_(P)(T)ρ(T).

FIG. 9 shows plots of k_(latt)/K as a function of temperature for Composition F as-made (open circles), reduced (open squares), and with different levels (1.5, 3.5, 5 and 7 wt. %) of TiC added. In FIG. 9, the 1.5 wt. % TiC data are illustrated as diamonds, 3.5 wt. % TiC as squares, 5 wt. % as triangles and 7 wt. % as circles. For the as-made material, k_(latt)/K was close to unity. The ratio decreased with reduction and with TiC additions of 3.5-7 wt. %. The ratio was lowest for 5 wt. % TiC over the entire temperature range explored. At 1050K, k_(latt)/K=0.77. ZT and the PF were maximized at this composition as well with ZT(1050K)=0.30.

TiB₂ and TiN additions were found to have an effect similar to TiC. Composition F was prepared with 1.7, 3, 6, and 8 wt. % TiB₂ and with 1.5, 5, and 7 wt. % TiN. Thermoelectric properties as a function of temperature are shown in FIGS. 10 and 11, respectively. In FIG. 10, reduced samples are shown as open squares, 1.7 wt. % TiB₂ are illustrated as diamonds, 3 wt. % TiB₂ as squares, 6 wt. % TiB₂ as triangles and 8 wt. % TiB₂ as circles. In FIG. 11, reduced samples are shown as open squares, 1.5 wt. % TiN are illustrated as diamonds, 5 wt. % TiN as triangles and 7 wt. % TiN as circles.

Decreases in k_(latt)/K and increases in PF and ZT over that of the Composition F reduced material from 550 to 1050K were obtained with both additives. This effect was obtained with 5 wt. % TiN, but only 1.7 wt. % TiB₂ was needed. The highest ZT at 1050K achieved with TiB₂ was 0.33 (3 wt. %) and with TiN was 0.30 (7 wt. %). These compositions also gave the lowest k_(latt)/K at 1050K, 0.75.

FIG. 12 shows the thermoelectric properties of Compositions F (open squares), H (diamonds), I (squares), K (triangles) and L (circles) as a function of temperature. A decrease in k_(latt)/K over that of the stoichiometric Composition F and increases in PF and ZT were observed from 550 to 1050K for Compositions K and L. The lowest k_(latt)/K, 0.81, and the highest PF and ZT at 1050K were obtained for Composition K (z=0.09). For this material, ZT (1050K)=0.25.

The microstructures of the materials were examined by SEM and EDX. Scanning electron microscopy (SEM) images and energy dispersive x-ray (EDX) spectra of polished samples of the sintered materials were taken using a Hitachi SU-70 FESEM with an OXFORD Inca EDX system.

FIG. 13 shows backscattered electron images of (a) Composition F reduced, (b) Composition K reduced, and Composition F with (c) 5 wt. % TiC, (f) 5 wt. % TiN, and (g) 5 wt. % TiB₂ additions. FIGS. 13 (d) and (e) shows EDX spectra for region 1 (matrix phase) and region 2 (dark phase) in FIG. 13( c). Both the addition of excess titania (FIG. 13 b) and the TiX additives (FIGS. 13 c, f, g) produced a large increase in grain size, from ≦5 microns to ≦20 microns, compared to the reduced stoichiometric material without additives (FIG. 13 a).

All of the materials were compositionally inhomogeneous as shown by the variations in gray level in the images. The matrix grains were determined to be La,Y-strontium titanate (see EDX spectrum, FIG. 13 d). The gray level gradation within the grains from dark gray to white indicates an increasing level of La enrichment. Areas of Y enrichment were also present. The black intergranular phase was identified as a titania-rich phase. In the excess titania (FIG. 13 b) and TiC (FIG. 13 c) materials, this phase has been identified as a titanate phase containing lower levels of strontium (see EDX spectrum, FIG. 20 e). The TiN material (FIG. 130 had a similar microstructure with more of the dark intergranular phase. In contrast, the TiB₂ material (FIG. 13 g), appeared much more homogeneous, exhibiting less gray level variation within the matrix grains.

In various embodiments, co-doping with La and Y and the introduction of a TiX (X═N, C, B₂) additive was shown to be more effective at improving the thermoelectric properties of strontium titanate than single element doping or co-doping with reduction alone. All of the additives produced increased electrical conductivities and power factors while suppressing lattice thermal conductivity.

An impact of the additives is to lower pO₂ within the graphite bed during the reduction step. This effect can be shown through thermodynamic calculations. Here, the reaction between TiO_(x), TiN, TiC, TiB₂ and pure CO(g) at 1400° C. are considered. Only pure phases (gases, liquids, solids) were included in the calculations. The results are shown in Table 2. A difference of several orders of magnitude in pO₂ is observed between TiO₂ and the TiX compounds, for which pO₂ hardly varies with CO:TiX.

Thus at 1400° C., pO₂ (TiB₂)≦pO₂ (TiC)<pO₂ (TiN)<<pO₂ (TiO₂).

TABLE 2 Thermodynamic calculations of pO₂ for TiO₂, TiN, TiC, and TiB₂ in equilibrium with CO (g) at T = 1673 K, P (total) = 1 atm. INPUTS (moles) 0.1 CO (g) 1 CO (g) 5 CO (g) 10 CO (g) 1 TiO2 2.4E−11 6.6E−12 1.2E−12 5.9E−13 1 TiN 1.6E−16 1.6E−16 1.6E−16 1.6E−16 1 TiC 7.3E−17 7.3E−17 7.3E−17 7.3E−17 1 TiB2 3.5E−17 3.5E−17 7.3E−17 7.3E−17

The additives create a more reducing environment than the graphite bed alone and can, therefore, be termed “reducing agents.” The electrical conductivity of SrTiO₃ has been shown to increase with decreasing pO₂ through the formation of oxygen vacancies and Ti⁺³. The addition of these reducing agents produced higher electrical conductivities and power factors than the graphite bed atmosphere alone, consistent with lower pO₂ during synthesis.

This increase in electrical conductivity was not accompanied by a proportional increase in thermal conductivity. The additives, therefore, play a second role of suppressing the lattice component of thermal conductivity. It is possible that oxygen vacancies induced by reduction increase the phonon scattering in the crystal lattice. Alternatively, the additives could act as a source of excess titania. Excess TiO₂ dissolved in the strontium titanate crystal would produce oxygen vacancies and Sr-site vacancies which, again, could act as phonon scatterers. When excess titania was batched into the La+Y co-doped strontium titanate, lower k_(latt)/K and higher power factors were obtained. Since the Ti₂O₃ was batched before the calcination step, it was most likely oxidized and would not have contributed to the reduction of the material during subsequent process steps as the TiX reducing agents would. The actual compositions of the strontium titanate materials were not measured.

In the present study, the grain sizes of materials with TiN, TiC, TiB₂ and excess titania additions that showed improved thermoelectric properties all had significantly larger grain sizes than the “stoichiometric” reduced material.

In addition to creating point defects, excess titania can lead to the formation of other phases. The Sr—Ti—O phase diagram shows a region of limited Ti solubility in SrTiO₃. Beyond this solubility range, equilibrium phase assemblages of SrTiO₃ (ss), TiO₂, Magneli phases (Ti_(n)O_(2n-1)), and other reduced titania compounds are predicted to form depending on the level of oxygen deficiency. SEM micrographs of materials in the present study did reveal multiphase microstructures including grains of La, Y strontium titanate and a titania-rich phase containing strontium.

The lack of TiN, TiC or TiB₂ detectable by XRD in the materials can be explained using thermodynamic calculations. In addition to producing lower pO₂, the calculations show that all three additives can be partially or fully converted to reduced titania, TiC, and carbon in the presence of CO(g) during the reduction step. In the case of TiB₂, gaseous and liquid boron oxide phases may also form. While no TiC or carbon was apparent in the SEM images, TEM examination of Composition F with 5 wt. % TiC did reveal small regions of TiC at triple junctions between grains. Such nanophases would not be detected by XRD, but could act as phonon scatterers, thereby reducing the lattice thermal conductivity.

Finally, some mention of the differences in the amounts of the reducing agent needed to achieve beneficial effects can be made. Addition levels which were effective at lowering k_(latt)/K (and increasing PF and ZT) were lower for TiB₂ than TiC, which were in turn lower than TiN. This minimum addition level correlates with their ability to decrease pO₂. That is, TiB₂ is more effective at reducing pO₂ than TiC which is more effective than TiN. An alternative explanation can be made based on the difference in particle sizes between the additives. The TiN powder was <3 microns, TiC<0.3 microns, and the TiB₂˜60 nm. These size differences may have affected the extent of reaction and interdiffusion within the powder compacts during the reduction and sintering steps. Indeed, the TiB₂ material did appear more homogeneous than the other materials at all addition levels.

The addition of a reducing agent during powder processing has been shown to improve the high temperature (550-1050K) thermoelectric properties of bulk, polycrystalline La,Y-doped strontium titanate ceramics. TiC, TiN, and TiB₂ were all shown to be effective for increasing the power factor while simultaneously suppressing the lattice thermal conductivity. Their effect may be attributed to increased charge carrier concentrations due to lower pO₂ during processing, the generation of point defects and secondary phases. Using these additives, the lattice component of the thermal conductivity was reduced from 97% of the thermal conductivity to 75% at 1050K. Materials with ZT up to 0.33 at 1050K were produced using this process.

As used herein, the singular forms “a,” “an” and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “an oxide” includes examples having two or more such “oxides” unless the context clearly indicates otherwise.

Ranges can be expressed herein as from “about” one particular value, and/or to “about” another particular value. When such a range is expressed, examples include from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent “about,” it will be understood that the particular value forms another aspect. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint.

Unless otherwise expressly stated, it is in no way intended that any method set forth herein be construed as requiring that its steps be performed in a specific order. Accordingly, where a method claim does not actually recite an order to be followed by its steps or it is not otherwise specifically stated in the claims or descriptions that the steps are to be limited to a specific order, it is no way intended that any particular order be inferred.

It will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit and scope of the disclosure. Since modifications combinations, sub-combinations and variations of the disclosed embodiments incorporating the spirit and substance of the disclosure may occur to persons skilled in the art, the disclosure should be construed to include everything within the scope of the appended claims and their equivalents. 

What is claimed is:
 1. A doped, partially-reduced thermoelectric oxide material represented by a formula: (Sr_(1-x)D1_(x))_(1-z)(Ti_(1-y)D2_(y))Ti_(z)O_(3-m), where D1 and D2 each represent one or more dopant atoms selected from the group consisting of Ce, Nb, Ta, La, Y, and other rare earth elements; wherein 0≦x≦0.4, 0≦y≦0.4, 0.025≦(x+y)≦0.4, 0≦z≦0.15, and m defines an oxygen non-stoichiometry with 0≦m≦0.1, and further comprising at least one second phase selected from the group consisting of TiC, TiN, TiO_(x) (x≦2) and TiB₂.
 2. The doped, partially-reduced thermoelectric oxide material according to claim 1, wherein a thermoelectric figure of merit for the material at 1050K is greater than 0.2.
 3. The doped, partially-reduced thermoelectric oxide material according to claim 1, wherein the material is co-doped.
 4. The doped, partially-reduced thermoelectric oxide material according to claim 1, further comprising from about 0.25 to 10 wt. % TiC, TiN, and/or TiB₂.
 5. The doped, partially-reduced thermoelectric oxide material according to claim 1, wherein a thermal conductivity of the material is less than 6 W/m-K over a temperature range of 400-1200K.
 6. A thermoelectric device comprising the doped, partially-reduced thermoelectric oxide material according to claim
 1. 7. A method of making a doped, partially-reduced thermoelectric oxide material, said method comprising: combining raw materials to form a mixture, surrounding the mixture with graphite; and heating the mixture to form a partially-reduced thermoelectric oxide material.
 8. The method according to claim 7, wherein the combining is done in air at a temperature of at least 900° C.
 9. The method according to claim 7, wherein the combining comprises forming the mixture of raw materials into a pellet.
 10. The method according to claim 7, wherein the raw materials comprise elements and/or compounds.
 11. The method according to claim 7, wherein the raw materials comprise oxides.
 12. The method according to claim 7, wherein the raw materials include a reducing agent.
 13. The method according to claim 12, wherein the reducing agent comprises titanium carbide, titanium nitride, titanium oxide or titanium boride.
 14. The method according to claim 7, wherein the heating temperature ranges from 1200 to 1800° C.
 15. The method according to claim 7, wherein the doped, partially-reduced thermoelectric oxide material is represented by a formula: (Sr_(1-x)D1_(x))_(1-z)(Ti_(1-y)D2_(y))Ti_(z)O_(3-m), where D1 and D2 each represent one or more dopant atoms selected from the group consisting of Ce, Nb, Ta, La, Y, and other rare earth elements; such that 0≦x≦0.4, 0≦y≦0.4, 0.025≦(x+y)≦0.4, 0≦z≦0.15, and m defines an oxygen non-stoichiometry with 0≦m≦0.1, and the material further comprises at least one second phase selected from the group consisting of TiC, TiN, TiO_(x) (x≦2) and TiB₂. 